j , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistors description ?with to-3 package ?high dc current gain ?darlington 2N6358 applications ?for general-purpose amplifier and low-frequency switching applications pinning pin 1 2 3 description base emitter collector absolute maximum ratings(ta= ) symbol vcbo vceo vebo ic ib pd tj 'stg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current base current total power dissipation junction temperature storage temperature conditions open emitter open base open collector tc=25_ value 80 60 5 20 0.5 150 200 -65-200 unit v v v a a w thermal characteristics symbol r|h|-c parameter thermal resistance junction to case value 1.09 unit /w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
characteristics tj=25 unless otherwise specified symbol v(br)ceo vcessl-1 vcesat-2 vbe sat vbe iceo icbo iebo ive-i hpe-2 parameter collector-emitter breakdwon voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage base-emitter on voltage collector cut-off current collector cut-off current emitter cut-off current dc current gain dc current gain conditions lc=0.2a ;ib=0 lc=10a;la=40ma ic=20a;ib=1a lc=20a;1b=1a lc=10a; vce=4v vce=60v;ib=0 vcb=80v; ie=0 veb=5v; lc=0 lc=4a ; vce=5v ic=20a ; vce=5v win 60 1500 100 typ. max 2.0 4.0 4.0 2.8 1.0 0.5 5.0 10000 unit v v v v v ma ma ma /^ t nj >, co 3 cd * o 3 j 1 ~ ' w_l * . o5 ' ^v- * ** f~^ uo > t ca? v / k 10. '> f \- t^ j ^ ? ^ '/ b7h1 x \^ / 1 u 2 \ 7 i 3.00 thick bsase ?? ? ? ^.^ t _ co ' o^ o(s f 0.70- -3a2 jj^.50 thin base i ? im ro ro |
